Invention Grant
- Patent Title: Hard mask spacer structure and fabrication method thereof
- Patent Title (中): 硬掩模间隔结构及其制造方法
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Application No.: US13492934Application Date: 2012-06-11
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Publication No.: US08697316B2Publication Date: 2014-04-15
- Inventor: Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
- Applicant: Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: G03F1/38
- IPC: G03F1/38
Abstract:
A hard mask spacer structure includes a first spacer on a device layer, the first spacer defining a plurality of hole patterns and at least an asteriated hole pattern between the hole patterns; and a second spacer on the first spacer and inlaid into the asteriated hole pattern, thereby rounding the asteriated hole pattern.
Public/Granted literature
- US20130330660A1 HARD MASK SPACER STRUCTURE AND FABRICATION METHOD THEREOF Public/Granted day:2013-12-12
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