发明授权
- 专利标题： Hard mask spacer structure and fabrication method thereof
- 专利标题（中）： 硬掩模间隔结构及其制造方法
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申请号： US13492934申请日： 2012-06-11
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公开(公告)号： US08697316B2公开(公告)日： 2014-04-15
- 发明人: Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
- 申请人： Ya-Chih Wang , Hai-Han Hung , Wen-Chieh Wang
- 申请人地址： TW Kueishan, Tao-Yuan Hsien
- 专利权人： Nanya Technology Corp.
- 当前专利权人： Nanya Technology Corp.
- 当前专利权人地址： TW Kueishan, Tao-Yuan Hsien
- 代理商 Winston Hsu; Scott Margo
- 主分类号： G03F1/38
- IPC分类号： G03F1/38
摘要：
A hard mask spacer structure includes a first spacer on a device layer, the first spacer defining a plurality of hole patterns and at least an asteriated hole pattern between the hole patterns; and a second spacer on the first spacer and inlaid into the asteriated hole pattern, thereby rounding the asteriated hole pattern.