发明授权
- 专利标题： Implementing decoupling devices inside a TSV DRAM stack
- 专利标题（中）： 在TSV DRAM堆栈内实现去耦器件
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申请号： US13477371申请日： 2012-05-22
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公开(公告)号： US08697567B2公开(公告)日： 2014-04-15
- 发明人: Joab D. Henderson , Kyu-hyoun Kim , Warren E. Maule , Kenneth L. Wright
- 申请人： Joab D. Henderson , Kyu-hyoun Kim , Warren E. Maule , Kenneth L. Wright
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Joan Pennington
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method and structures are provided for implementing decoupling capacitors within a DRAM TSV stack. A DRAM is formed with a plurality of TSVs extending completely through the substrate and filled with a conducting material. A layer of glass is grown on both the top and bottom of the DRAM providing an insulator. A layer of metal is grown on each glass layer providing a conductor. The metal and glass layers are etched through to TSVs with a gap provided around the perimeter of via pads. A respective solder ball is formed on the TSVs to connect to another DRAM chip in the DRAM TSV stack. The metal layers are connected to at least one TSV by one respective solder ball and are connected to a voltage source and a dielectric is inserted between the metal layers in the DRAM TSV stack to complete the decoupling capacitor.
公开/授权文献
- US20130313705A1 IMPLEMENTING DECOUPLING DEVICES INSIDE A TSV DRAM STACK 公开/授权日：2013-11-28
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