Semiconductor chip including a plurality of chip areas and fabricating method thereof

Invention Grant

US08697568B2 Semiconductor chip including a plurality of chip areas and fabricating method thereof 有权

Title translation: 包括多个芯片区域的半导体芯片及其制造方法

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Patent Title: Semiconductor chip including a plurality of chip areas and fabricating method thereof
Patent Title (中): 包括多个芯片区域的半导体芯片及其制造方法
Application No.: US13647785

Application Date: 2012-10-09
Publication No.: US08697568B2

Publication Date: 2014-04-15
Inventor: Young Min Kang , Hyungwoo Kim , Ki-chul Park , SangMan Lee
Applicant: Samsung Electronics Co., Ltd.
Applicant Address: KR Suwon-si
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si
Agency: Sughrue Mion, PLLC
Priority: KR10-2011-0102008 20111006
Main IPC: H01L21/4763
IPC: H01L21/4763

Semiconductor chip including a plurality of chip areas and fabricating method thereof

Abstract:

Disclosed is a method of fabricating a semiconductor chip. The method includes forming a silicon layer; forming a first layer formed on the silicon layer and including a first seal ring surrounding a first chip area and a second seal ring surrounding a second chip area; and forming a second layer formed on the first layer and including a metal interconnection connecting one of the first and second chip areas and an external terminal.

Abstract(Chinese):

公开了一种制造半导体芯片的方法。该方法包括形成硅层; 形成在所述硅层上形成的第一层，并且包括围绕第一芯片区域的第一密封环和围绕第二芯片区域的第二密封环; 以及形成在所述第一层上形成的第二层，并且包括连接所述第一和第二芯片区域之一的金属互连件和外部端子。

Public/Granted literature

US20130087891A1 SEMICONDUCTOR CHIP AND FABRICATING METHOD THEREOF Public/Granted day:2013-04-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）