Invention Grant
- Patent Title: Resistive switching memory element including doped silicon electrode
- Patent Title (中): 电阻式开关存储元件包括掺杂硅电极
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Application No.: US13935388Application Date: 2013-07-03
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Publication No.: US08698121B2Publication Date: 2014-04-15
- Inventor: Prashant B. Phatak , Tony P. Chiang , Michael Miller , Wen Wu
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L47/00
- IPC: H01L47/00
Abstract:
A resistive switching memory is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching using unipolar or bipolar switching voltages for switching from a low resistance state to a high resistance state and vice versa.
Public/Granted literature
- US20130292632A1 Resistive Switching Memory Element Including Doped Silicon Electrode Public/Granted day:2013-11-07
Information query
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