Invention Grant
US08698129B2 Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor
有权
无种子量子阱晶体管，用于制造这种无植入自由量子阱晶体管的方法和使用这种无植入自由量子阱晶体管
- Patent Title: Implant free quantum well transistor, method for making such an implant free quantum well transistor and use of such an implant free quantum well transistor
- Patent Title (中): 无种子量子阱晶体管，用于制造这种无植入自由量子阱晶体管的方法和使用这种无植入自由量子阱晶体管
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Application No.: US13723149Application Date: 2012-12-20
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Publication No.: US08698129B2Publication Date: 2014-04-15
- Inventor: Geert Hellings , Geert Eneman
- Applicant: IMEC , Katholieke Universiteit Leuven, K.U. Leuven R&D
- Applicant Address: BE Leuven BE Leuven
- Assignee: IMEC,Katholieke Universiteit Leuven, KU Leuven R&D
- Current Assignee: IMEC,Katholieke Universiteit Leuven, KU Leuven R&D
- Current Assignee Address: BE Leuven BE Leuven
- Agency: McDonnell Boehnen Hulbert & Berghoff LLP
- Priority: EP11195619 20111223
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
An implant free quantum well transistor wherein the doped region comprises an implant region having an increased concentration of dopants with respect to the concentration of dopants of adjacent regions of the substrate, the implant region being substantially positioned at a side of the quantum well region opposing the gate region.
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