发明授权
- 专利标题: Semiconductor device including a voltage controlled termination structure and method for fabricating same
- 专利标题(中): 包括电压控制终端结构的半导体器件及其制造方法
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申请号: US12655668申请日: 2010-01-04
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公开(公告)号: US08698232B2公开(公告)日: 2014-04-15
- 发明人: Aram Arzumanyan , Timothy D. Henson , Ling Ma
- 申请人: Aram Arzumanyan , Timothy D. Henson , Ling Ma
- 申请人地址: US CA El Segundo
- 专利权人: International Rectifier Corporation
- 当前专利权人: International Rectifier Corporation
- 当前专利权人地址: US CA El Segundo
- 代理机构: Farjami & Farjami LLP
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; H01L21/336
摘要:
According to one embodiment, a semiconductor device including a voltage controlled termination structure comprises an active area including a base region of a first conductivity type formed in a semiconductor body of a second conductivity type formed over a first major surface of a substrate of the second conductivity type, a termination region formed in the semiconductor body adjacent the active area and including the voltage controlled termination structure. The voltage controlled termination structure includes an electrode electrically connected to a terminal of the semiconductor device. In one embodiment, the electrode of the voltage controlled termination structure is electrically connected to a gate terminal of the semiconductor device. In one embodiment, the electrode of the voltage controlled termination structure is electrically connected to a source terminal of the semiconductor device.