发明授权
- 专利标题： Nitride-based semiconductor substrates having hollow member pattern and methods of fabricating the same
- 专利标题（中）： 具有中空构件图案的氮化物基半导体衬底及其制造方法
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申请号： US13078145申请日： 2011-04-01
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公开(公告)号： US08698284B2公开(公告)日： 2014-04-15
- 发明人: Sang-Moon Lee
- 申请人： Sang-Moon Lee
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0104748 20101026
- 主分类号： H01L29/06
- IPC分类号： H01L29/06 ; H01L29/04 ; H01L21/00
摘要：
A nitride-based semiconductor substrate may includes a plurality of hollow member patterns arranged on a substrate, a nitride-based seed layer formed on the substrate between the plurality of hollow member patterns, and a nitride-based buffer layer on the nitride-based seed layer so as to cover the plurality of hollow member patterns, wherein the plurality of hollow member patterns contact the substrate in a first direction and both ends of each of the plurality of hollow member patterns are open in the first direction.
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