发明授权
- 专利标题: Bandgap reference circuit for providing reference voltage
- 专利标题(中): 带隙参考电路,用于提供参考电压
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申请号: US13434856申请日: 2012-03-30
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公开(公告)号: US08698479B2公开(公告)日: 2014-04-15
- 发明人: Ming-Sheng Tung
- 申请人: Ming-Sheng Tung
- 申请人地址: TW Hsinchu Science Park, Hsinchu
- 专利权人: Elite Semiconductor Memory Technology Inc.
- 当前专利权人: Elite Semiconductor Memory Technology Inc.
- 当前专利权人地址: TW Hsinchu Science Park, Hsinchu
- 代理商 Winston Hsu; Scott Margo
- 主分类号: G05F3/08
- IPC分类号: G05F3/08 ; H01L37/00
摘要:
A bandgap reference circuit includes a first circuit, a second circuit and a third circuit. The first circuit is for generating a first current and a first voltage according to a first reference voltage. The second circuit is coupled to the first circuit, for generating a second voltage according to the first voltage. The third circuit is coupled to the first circuit and the second circuit, for generating a voltage offset according to the first current, and generating a bandgap reference voltage according to the second voltage and the voltage offset. The first circuit and the second circuit complement each other for offsetting variations of the bandgap reference voltage due to temperature changes.
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