发明授权
- 专利标题： Methods for manufacturing thin film transistor
- 专利标题（中）： 制造薄膜晶体管的方法
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申请号： US13924741申请日： 2013-06-24
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公开(公告)号： US08703560B2公开(公告)日： 2014-04-22
- 发明人: Hidekazu Miyairi , Shinya Sasagawa , Akihiro Ishizuka
- 申请人： Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2007-228325 20070903
- 主分类号： H01L21/84
- IPC分类号： H01L21/84
摘要：
The present invention provides a method for manufacturing a highly reliable semiconductor device with a small amount of leakage current. In a method for manufacturing a thin film transistor, etching is conducted using a resist mask to form a back channel portion in the thin film transistor, the resist mask is removed, a part of the back channel is etched to remove etching residue and the like left over the back channel portion, whereby leakage current caused by the residue and the like can be reduced. The etching step of the back channel portion can be conducted by dry etching using non-bias.
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