Invention Grant
US08704235B2 Semiconductor circuit having capacitor and thin film transistor, flat panel display including the semiconductor circuit, and method of manufacturing the semiconductor circuit
有权
具有电容器和薄膜晶体管的半导体电路,包括半导体电路的平板显示器以及半导体电路的制造方法
- Patent Title: Semiconductor circuit having capacitor and thin film transistor, flat panel display including the semiconductor circuit, and method of manufacturing the semiconductor circuit
- Patent Title (中): 具有电容器和薄膜晶体管的半导体电路,包括半导体电路的平板显示器以及半导体电路的制造方法
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Application No.: US12475136Application Date: 2009-05-29
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Publication No.: US08704235B2Publication Date: 2014-04-22
- Inventor: Chul-Kyu Kang , Do-Hyun Kwon , Ju-Won Yoon , Jong-Hyun Choi , June-Woo Lee
- Applicant: Chul-Kyu Kang , Do-Hyun Kwon , Ju-Won Yoon , Jong-Hyun Choi , June-Woo Lee
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: KR10-2008-0053816 20080609
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L29/04 ; H01L29/15 ; H01L31/036 ; H01L29/10 ; H01L31/00 ; H01L21/00

Abstract:
A flat panel display including a semiconductor circuit, and a method of manufacturing the semiconductor circuit are disclosed. In one embodiment, the semiconductor circuit includes i) a substrate, ii) a semiconductor layer and a first capacitor electrode formed on the substrate, the first capacitor electrode being doped to be conductive, iii) an insulating layer covering the semiconductor layer and the first capacitor electrode, iv) a gate electrode disposed on the insulating layer and corresponding to a portion of the semiconductor layer, and v) a second capacitor electrode disposed on the insulating layer and corresponding to the first capacitor electrode, wherein the gate electrode is thicker than the second capacitor electrode.
Public/Granted literature
Information query
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