发明授权
- 专利标题： Three dimensional semiconductor memory device and method for fabricating the same
- 专利标题（中）： 三维半导体存储器件及其制造方法
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申请号： US13231177申请日： 2011-09-13
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公开(公告)号： US08704293B2公开(公告)日： 2014-04-22
- 发明人: Sang-Yong Park , Jintaek Park
- 申请人： Sang-Yong Park , Jintaek Park
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Lee & Morse, P.C.
- 优先权： KR10-2010-0092578 20100920
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
A three-dimensional semiconductor device includes a stacked structure including a plurality of conductive layers stacked on a substrate, a distance along a first direction between sidewalls of an upper conductive layer and a lower conductive layer being smaller than a distance along a second direction between sidewalls of the upper conductive layer and the lower conductive layer, the first and second directions crossing each other and defining a plane parallel to a surface supporting the substrate, and vertical channel structures penetrating the stacked structure.
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