Invention Grant
US08704361B2 Sealing glass for semiconductor device, sealing material, sealing material paste, and semiconductor device and its production process
有权
半导体器件密封玻璃,密封材料,密封材料浆料和半导体器件及其生产工艺
- Patent Title: Sealing glass for semiconductor device, sealing material, sealing material paste, and semiconductor device and its production process
- Patent Title (中): 半导体器件密封玻璃,密封材料,密封材料浆料和半导体器件及其生产工艺
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Application No.: US13362690Application Date: 2012-01-31
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Publication No.: US08704361B2Publication Date: 2014-04-22
- Inventor: Hiroki Takahashi
- Applicant: Hiroki Takahashi
- Applicant Address: JP Tokyo
- Assignee: Asahi Glass Company, Limited
- Current Assignee: Asahi Glass Company, Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-179234 20090731
- Main IPC: H01L23/10
- IPC: H01L23/10 ; B28B11/00

Abstract:
A sealing glass, a sealing material, and a sealing material paste, which suppress metal deposition by reducing glass components (metal oxides) without decreasing the reactivity with and the adhesion to a semiconductor substrate. The sealing glass, contains a low temperature melting glass containing, by mass ratio: from 0.1 to 5% of at least one metal oxide selected from the group consisting of Fe, Mn, Cr, Co, Ni, Nb, Hf, W, Re, a rare earth element, and optionally Mo; and from 5 to 100 ppm by mass ratio of K2O, wherein the low temperature melting glass has a softening point of at most 430° C. The sealing material device, contains the sealing glass and an inorganic filler in an amount of from 0 to 40% by volume ratio. The sealing material paste contains a mixture of the sealing material and a vehicle.
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