发明授权
- 专利标题： Semiconductor device and manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件及半导体器件的制造方法
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申请号： US13224787申请日： 2011-09-02
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公开(公告)号： US08704367B2公开(公告)日： 2014-04-22
- 发明人: Tatsuo Migita , Hirokazu Ezawa , Soichi Yamashita , Koro Nagamine , Masahiro Miyata , Tatsuo Shiotsuki , Kiyoshi Muranishi
- 申请人： Tatsuo Migita , Hirokazu Ezawa , Soichi Yamashita , Koro Nagamine , Masahiro Miyata , Tatsuo Shiotsuki , Kiyoshi Muranishi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-198379 20100903; JP2010-212184 20100922
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52
摘要：
According to one embodiment, a semiconductor substrate, a metal film, a surface modifying layer, and a redistribution trace are provided. On the semiconductor substrate, a wire and a pad electrode are formed. The metal film is formed over the semiconductor substrate. The surface modifying layer is formed on a surface layer of the metal film and improves the adhesion with a resist pattern. The redistribution trace is formed on the metal film via the surface modifying layer.
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