发明授权
- 专利标题： Semiconductor device and fabrication method
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13440506申请日： 2012-04-05
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公开(公告)号： US08709896B2公开(公告)日： 2014-04-29
- 发明人: Masaki Haneda , Yuka Kase , Masanori Terahara , Takayuki Aoyama
- 申请人： Masaki Haneda , Yuka Kase , Masanori Terahara , Takayuki Aoyama
- 申请人地址： JP Yokohama
- 专利权人： Fujitsu Semiconductor Limited
- 当前专利权人： Fujitsu Semiconductor Limited
- 当前专利权人地址： JP Yokohama
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP
- 优先权： JP2011-084093 20110405; JP2012-000836 20120105
- 主分类号： H01L21/336
- IPC分类号： H01L21/336
摘要：
A semiconductor device includes a semiconductor substrate including a well having a first conductivity type defined by a device isolation region, a gate insulating film formed on the semiconductor substrate, a gate electrode formed on the gate insulating film and including a first side surface and a second side surface facing the first side surface, and a first side wall insulating film formed on the first side surface and a second side wall insulating film formed on the second side surface.
公开/授权文献
- US20120256264A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD 公开/授权日：2012-10-11