发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13448611申请日： 2012-04-17
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公开(公告)号： US08709922B2公开(公告)日： 2014-04-29
- 发明人: Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
- 申请人： Junichi Koezuka , Naoto Yamade , Kyoko Yoshioka , Yuhei Sato , Mari Terashima
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2011-103592 20110506
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/66
摘要：
A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
公开/授权文献
- US20120280234A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-11-08
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