发明授权
- 专利标题： SONOS stack with split nitride memory layer
- 专利标题（中）： SONOS堆叠带有划痕的氮化物存储层
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申请号： US13431069申请日： 2012-03-27
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公开(公告)号： US08710578B2公开(公告)日： 2014-04-29
- 发明人: Fredrick Jenne , Krishnaswamy Ramkumar
- 申请人： Fredrick Jenne , Krishnaswamy Ramkumar
- 申请人地址： US CA San Jose
- 专利权人： Cypress Semiconductor Corporation
- 当前专利权人： Cypress Semiconductor Corporation
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
Embodiments of a non-planar memory device including a split charge-trapping region and methods of forming the same are described. Generally, the device comprises: a channel formed from a thin film of semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device; a tunnel oxide overlying the channel; a split charge-trapping region overlying the tunnel oxide, the split charge-trapping region including a bottom charge-trapping layer comprising a nitride closer to the tunnel oxide, and a top charge-trapping layer, wherein the bottom charge-trapping layer is separated from the top charge-trapping layer by a thin anti-tunneling layer comprising an oxide. Other embodiments are also disclosed.
公开/授权文献
- US20130175600A1 SONOS STACK WITH SPLIT NITRIDE MEMORY LAYER 公开/授权日：2013-07-11
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