发明授权
- 专利标题: Semiconductor overlapped PN structure and manufacturing method thereof
- 专利标题(中): 半导体重叠PN结构及其制造方法
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申请号: US13864196申请日: 2013-04-16
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公开(公告)号: US08710633B2公开(公告)日: 2014-04-29
- 发明人: Tsung-Yi Huang , Chien-Hao Huang , Ying-Shiou Lin
- 申请人: Tsung-Yi Huang , Chien-Hao Huang , Ying-Shiou Lin
- 申请人地址: TW Chupei, Hsin-Chu
- 专利权人: Richtek Technology Corporation
- 当前专利权人: Richtek Technology Corporation
- 当前专利权人地址: TW Chupei, Hsin-Chu
- 代理机构: Tung & Associates
- 主分类号: H01L29/06
- IPC分类号: H01L29/06
摘要:
The present invention discloses a semiconductor overlapped PN structure and manufacturing method thereof. The method includes: providing a substrate; providing a first mask to define a P (or N) type well and at least one overlapped region in the substrate; implanting P (or N) type impurities into the P (or N) type well and the at least one overlapped region; providing a second mask having at least one opening to define an N (or P) type well in the substrate, and to define at least one dual-implanted region in the at least one overlapped region; implanting N (or P) type impurities into the N (or P) type well and the at least one dual-implanted region such that the at least one dual-implanted region has P type and N type impurities.