发明授权
- 专利标题： Structure and method of reducing electromigration cracking and extrusion effects in semiconductor devices
- 专利标题（中）： 减少半导体器件中电迁移破裂和挤出效应的结构和方法
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申请号： US13530999申请日： 2012-06-22
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公开(公告)号： US08716101B2公开(公告)日： 2014-05-06
- 发明人: Kaushik Chandra , Ronald G. Filippi , Wai-Kin Li , Ping-Chuan Wang , Chih-Chao Yang
- 申请人： Kaushik Chandra , Ronald G. Filippi , Wai-Kin Li , Ping-Chuan Wang , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Ian MacKinnon
- 主分类号： H01L21/76
- IPC分类号： H01L21/76
摘要：
A structure for reducing electromigration cracking and extrusion effects in semiconductor devices includes a first metal line formed in a first dielectric layer; a cap layer formed over the first metal line and first dielectric layer; a second dielectric layer formed over the cap layer; and a void formed in the second dielectric layer, stopping on the cap layer, wherein the void is located in a manner so as to isolate structural damage due to electromigration effects of the first metal line, the effects including one or more of extrusions of metal material from the first metal line and cracks from delamination of the cap layer with respect to the first dielectric layer.