发明授权
- 专利标题： Methods of forming through silicon via openings
- 专利标题（中）： 通过开孔形成硅的方法
-
申请号： US13086542申请日： 2011-04-14
-
公开(公告)号： US08716128B2公开(公告)日： 2014-05-06
- 发明人: Chyi Shyuan Chern , Hsin-Hsien Wu , Chun-Lin Chang , Hsing-Kuo Hsia , Hung-Yi Kuo
- 申请人： Chyi Shyuan Chern , Hsin-Hsien Wu , Chun-Lin Chang , Hsing-Kuo Hsia , Hung-Yi Kuo
- 申请人地址： TW Hsin-Chu
- 专利权人： TSMC Solid State Lighting Ltd.
- 当前专利权人： TSMC Solid State Lighting Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768
摘要：
A method of forming a through-silicon-via (TSV) opening includes forming a TSV opening through a substrate. A recast of a material of the substrate on sidewalls of the TSV opening is removed with a first chemical. The sidewalls of the TSV opening are cleaned with a second chemical by substantially removing a residue of the first chemical.
公开/授权文献
- US20120264296A1 METHODS OF FORMING THROUGH SILICON VIA OPENINGS 公开/授权日：2012-10-18
信息查询
IPC分类:
