发明授权
- 专利标题： Semiconductor device with a charge carrier compensation structure and method for the production of a semiconductor device
- 专利标题（中）： 具有载流子补偿结构的半导体器件和用于制造半导体器件的方法
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申请号： US12241985申请日： 2008-09-30
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公开(公告)号： US08716792B2公开(公告)日： 2014-05-06
- 发明人: Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
- 申请人： Anton Mauder , Franz Hirler , Armin Willmeroth , Michael Rueb , Holger Kapels
- 申请人地址： AT Villach
- 专利权人： Infineon Technologies Austria AG
- 当前专利权人： Infineon Technologies Austria AG
- 当前专利权人地址： AT Villach
- 代理机构： Dicke, Billig & Czaja, PLLC
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A semiconductor device has a cell field with drift zones of a first type of conductivity and charge carrier compensation zones of a second type of conductivity complementary to the first type. An edge region which surrounds the cell field has a higher blocking strength than the cell field, the edge region having a near-surface area which is undoped to more weakly doped than the drift zones, and beneath the near-surface area at least one buried, vertically extending complementarily doped zone is positioned.
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