Invention Grant
- Patent Title: Direct write interconnections and method of manufacturing thereof
- Patent Title (中): 直接写入互连及其制造方法
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Application No.: US13328359Application Date: 2011-12-16
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Publication No.: US08716870B2Publication Date: 2014-05-06
- Inventor: Arun Virupaksha Gowda
- Applicant: Arun Virupaksha Gowda
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Ziolkowski Patent Solutions Group, SC
- Agent Jean K. Testa
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/50

Abstract:
A semiconductor device package having direct write interconnections and method of manufacturing thereof is disclosed. A device package is formed by providing a substrate structure, attaching at least one device to the substrate structure that each include a substrate and one or more connection pads formed on the substrate, depositing a dielectric layer over the at least one device and onto the substrate structure by way of a direct write application, the dielectric layer including vias formed therethrough, and forming an interconnect structure on the dielectric layer that is electrically coupled to the connection pads of the at least one device, the interconnect structure extending through the vias in the dielectric layer so as to be connected to the connection pads.
Public/Granted literature
- US20130154110A1 DIRECT WRITE INTERCONNECTIONS AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2013-06-20
Information query
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