发明授权
- 专利标题： Diode for electrostatic protection
- 专利标题（中）： 二极管用于静电保护
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申请号： US13881227申请日： 2011-10-13
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公开(公告)号： US08717724B2公开(公告)日： 2014-05-06
- 发明人: Joon Young Park , Jong Hoon Park , Chang Kun Park
- 申请人： Joon Young Park , Jong Hoon Park , Chang Kun Park
- 申请人地址： KR Seoul
- 专利权人： Soongsil University research Consortium techno-Park
- 当前专利权人： Soongsil University research Consortium techno-Park
- 当前专利权人地址： KR Seoul
- 代理机构： Sherr & Jiang, PLLC
- 优先权： KR10-2010-0106350 20101028
- 国际申请： PCT/KR2011/007598 WO 20111013
- 国际公布： WO2012/057464 WO 20120503
- 主分类号： H02H9/00
- IPC分类号： H02H9/00 ; H02H3/22 ; H01L29/73 ; H01L27/02
摘要：
Provided is an electrostatic discharge (ESD) protection diode that is formed on an input/output pad of an integrated circuit (IC), the ESD protection diode including: an N-type semiconductor that constitutes a first diode and is connected to a pad for a power supply voltage; a P-type semiconductor that constitutes the first diode and is connected to a signal line; an N-type semiconductor that constitutes a second diode and is connected to the signal line; a P-type semiconductor that constitutes the second diode and is connected to a pad for grounding; and a third diode that is formed by contacting the N-type semiconductor of the first diode and the P-type semiconductor of the second diode.
公开/授权文献
- US20130207224A1 DIODE FOR ELECTROSTATIC PROTECTION 公开/授权日：2013-08-15
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