Invention Grant
- Patent Title: Nonvolatile semiconductor device and method for testing the same
- Patent Title (中): 非易失性半导体器件及其测试方法
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Application No.: US13550842Application Date: 2012-07-17
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Publication No.: US08717830B2Publication Date: 2014-05-06
- Inventor: Sang Kug Lym , Yoon Jae Shin
- Applicant: Sang Kug Lym , Yoon Jae Shin
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0047419 20120504
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A nonvolatile semiconductor device and a method for testing the same are provided. The nonvolatile semiconductor device includes a current generating unit configured to generate a set write current depending on a step pulse that is generated based on a reference current and output the set write current to a memory cell, and a current measuring unit configured to measure a step duration of the step pulse and output a measured result outside of a chip during an activation period of a test enable signal.
Public/Granted literature
- US20130294175A1 NONVOLATILE SEMICONDUCTOR DEVICE AND METHOD FOR TESTING THE SAME Public/Granted day:2013-11-07
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