Invention Grant
US08717830B2 Nonvolatile semiconductor device and method for testing the same 有权
非易失性半导体器件及其测试方法

  • Patent Title: Nonvolatile semiconductor device and method for testing the same
  • Patent Title (中): 非易失性半导体器件及其测试方法
  • Application No.: US13550842
    Application Date: 2012-07-17
  • Publication No.: US08717830B2
    Publication Date: 2014-05-06
  • Inventor: Sang Kug LymYoon Jae Shin
  • Applicant: Sang Kug LymYoon Jae Shin
  • Applicant Address: KR Icheon
  • Assignee: SK Hynix Inc.
  • Current Assignee: SK Hynix Inc.
  • Current Assignee Address: KR Icheon
  • Priority: KR10-2012-0047419 20120504
  • Main IPC: G11C7/00
  • IPC: G11C7/00
Nonvolatile semiconductor device and method for testing the same
Abstract:
A nonvolatile semiconductor device and a method for testing the same are provided. The nonvolatile semiconductor device includes a current generating unit configured to generate a set write current depending on a step pulse that is generated based on a reference current and output the set write current to a memory cell, and a current measuring unit configured to measure a step duration of the step pulse and output a measured result outside of a chip during an activation period of a test enable signal.
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