发明授权
US08722445B2 Planar cavity MEMS and related structures, methods of manufacture and design structures
有权
平面腔MEMS及相关结构,制造方法和设计结构
- 专利标题: Planar cavity MEMS and related structures, methods of manufacture and design structures
- 专利标题(中): 平面腔MEMS及相关结构,制造方法和设计结构
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申请号: US12973430申请日: 2010-12-20
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公开(公告)号: US08722445B2公开(公告)日: 2014-05-13
- 发明人: Dinh Dang , Thai Doan , Jeffrey C. Maling , Anthony K. Stamper
- 申请人: Dinh Dang , Thai Doan , Jeffrey C. Maling , Anthony K. Stamper
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Robert Mlotkowski Safran & Cole, P.C.
- 代理商 Anthony Canale
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; B81B3/00
摘要:
A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a plurality of discrete wires on a substrate. The method further includes forming a sacrificial cavity layer on the discrete wires. The method further includes forming trenches in an upper surface of the sacrificial cavity layer. The method further includes filling the trenches with dielectric material. The method further includes depositing metal on the sacrificial cavity layer and on the dielectric material to form a beam with at least one dielectric bumper extending from a bottom surface thereof.