Invention Grant
US08722506B2 Production of high alignment marks and such alignment marks on a semiconductor wafer
有权
在半导体晶片上制造高对准标记和这种对准标记
- Patent Title: Production of high alignment marks and such alignment marks on a semiconductor wafer
- Patent Title (中): 在半导体晶片上制造高对准标记和这种对准标记
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Application No.: US13139002Application Date: 2009-12-23
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Publication No.: US08722506B2Publication Date: 2014-05-13
- Inventor: Steffen Reymann , Gerhard Fiehne , Uwe Eckoldt
- Applicant: Steffen Reymann , Gerhard Fiehne , Uwe Eckoldt
- Applicant Address: DE Erfurt
- Assignee: X-Fab Semiconductor Foundries AG
- Current Assignee: X-Fab Semiconductor Foundries AG
- Current Assignee Address: DE Erfurt
- Agency: Hunton & Williams LLP
- Priority: DE102008063156 20081224
- International Application: PCT/IB2009/055935 WO 20091223
- International Announcement: WO2010/073226 WO 20100701
- Main IPC: H01L21/76
- IPC: H01L21/76
Abstract:
The invention relates to production of alignment marks on a semiconductor wafer with the use of a light-opaque layer (17), wherein, before the light-opaque layer (17) is applied, by means of the etching of cavities, free-standing pillar groups are produced in the cavities and then the light-opaque layer (17) is applied. The pillars are produced with a height of above 1 μm, which, moreover, is greater than a thickness of the light-opaque layer (17) to be applied in the cavities as layer portions (17x; 17y). The cavities are formed with a width such that they are filled only partly with the layer portions (17x; 17y) when the light-opaque layer (17) is applied. The high, freely positioned alignment marks produced by the method as pillar series (16x; 16y), having a plurality of individual pillars (16a; 16a′) in a cavity (12a, 12y), of a scribing trench on the semiconductor wafer are likewise described.
Public/Granted literature
- US20120032356A1 PRODUCTION OF HIGH ALIGNMENT MARKS AND SUCH ALIGNMENT MARKS ON A SEMICONDUCTOR WAFER Public/Granted day:2012-02-09
Information query
IPC分类:
