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发明授权
US08723179B2 Thin film transistor panel having an etch stopper on semiconductor 有权
薄膜晶体管板在半导体上具有蚀刻停止层

Thin film transistor panel having an etch stopper on semiconductor
摘要：
A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要（中）：

薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的 在蚀刻停止器上。

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