A vertical Hall sensor circuit includes an arrangement comprising a vertical Hall effect region of a first doping type, formed within a semiconductor substrate and having a stress dependency with respect to a Hall effect-related electrical characteristic. The vertical Hall sensor circuit further includes a stress compensation circuit which comprises at least one of a lateral resistor arrangement and a vertical resistor arrangement for generating a stress-dependent lateral resistor arrangement signal based on a reference signal provided to the stress compensation circuit, and for generating a stress-dependent vertical resistor arrangement signal based on the reference signal, respectively. The vertical Hall sensor circuit further includes a first circuit for providing a first signal to the arrangement based on at least one of the stress-dependent lateral resistor arrangement signal and the stress-dependent vertical resistor arrangement signal.