Invention Grant
US08728720B2 Arbitrary pattern direct nanostructure fabrication methods and system
有权
任意模式直接纳米结构制造方法和系统
- Patent Title: Arbitrary pattern direct nanostructure fabrication methods and system
- Patent Title (中): 任意模式直接纳米结构制造方法和系统
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Application No.: US13156221Application Date: 2011-06-08
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Publication No.: US08728720B2Publication Date: 2014-05-20
- Inventor: David Jen Hwang , Costas P. Grigoropoulos
- Applicant: David Jen Hwang , Costas P. Grigoropoulos
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Bozicevic, Field & Francis LLP
- Agent Bret E. Field; Rudy J. Ng
- Main IPC: G03F7/00
- IPC: G03F7/00
Abstract:
Methods of producing a nanostructure in a target film are provided. The method includes selectively irradiating at least one focusing element of a near-field focusing array that is in near-field focusing relationship with a target film in a manner sufficient to produce a nanostructure from the target film. Also provided are systems for practicing methods of the invention, as well as objects produced thereby.
Public/Granted literature
- US20110318695A1 ARBITRARY PATTERN DIRECT NANOSTRUCTURE FABRICATION METHODS AND SYSTEM Public/Granted day:2011-12-29
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