发明授权
- 专利标题： Graphene electronic device and method of fabricating the same
- 专利标题（中）： 石墨烯电子器件及其制造方法
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申请号： US13329842申请日： 2011-12-19
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公开(公告)号： US08728880B2公开(公告)日： 2014-05-20
- 发明人: Hyun-jong Chung , Jin-seong Heo , Hee-jun Yang , Sun-ae Seo , Sung-hoon Lee
- 申请人： Hyun-jong Chung , Jin-seong Heo , Hee-jun Yang , Sun-ae Seo , Sung-hoon Lee
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0129995 20101217
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/84
摘要：
A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.