Invention Grant
- Patent Title: Wafer laser-making method and die fabricated using the same
- Patent Title (中): 晶圆激光制造方法和使用其制造的模具
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Application No.: US13225756Application Date: 2011-09-06
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Publication No.: US08728915B2Publication Date: 2014-05-20
- Inventor: Yu-Pin Tsai , Cheng-I Huang , Yao-Hui Hu
- Applicant: Yu-Pin Tsai , Cheng-I Huang , Yao-Hui Hu
- Applicant Address: TW Kaosiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaosiung
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW97125143A 20080703
- Main IPC: H01L21/268
- IPC: H01L21/268 ; H01L29/06 ; H01L21/683 ; H01L23/544 ; H01L23/00
Abstract:
A wafer laser-marking method is provided. First, a wafer having a first surface (an active surface) and a second surface (a back surface) opposite to each other is provided. Next, the wafer is thinned. Then, the thinned wafer is fixed on a non-UV tape such that the second surface of the wafer is attached to the tape. Finally, the laser marking step is performed, such that a laser light penetrates the non-UV tape and marks a pattern on the second surface of the wafer. According to the laser-marking method of the embodiment, the pattern is formed by the non-UV residuals left on the second surface of the wafer, and the components of the glue residuals at least include elements of silicon and carbon.
Public/Granted literature
- US20110316122A1 WAFER LASER-MARKING METHOD AND DIE FABRICATED USING THE SAME Public/Granted day:2011-12-29
Information query
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