发明授权
- 专利标题： Nitride-based semiconductor light-emitting element, lighting device, liquid crystal display device, and method for producing lighting device
- 专利标题（中）： 氮化物系半导体发光元件，照明装置，液晶显示装置及照明装置的制造方法
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申请号： US13432022申请日： 2012-03-28
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公开(公告)号： US08729579B2公开(公告)日： 2014-05-20
- 发明人: Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
- 申请人： Toshiya Yokogawa , Akira Inoue , Masaki Fujikane , Mitsuaki Oya , Atsushi Yamada , Tadashi Yano
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： Renner, Otto, Boisselle & Sklar, LLP
- 优先权： JP2009-279358 20091209
- 主分类号： H01L33/00
- IPC分类号： H01L33/00
摘要：
An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths λ1 and λ2, respectively, where the inequalities of λ1