Invention Grant
- Patent Title: Light emitting diode element
- Patent Title (中): 发光二极管元件
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Application No.: US13658813Application Date: 2012-10-23
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Publication No.: US08729588B2Publication Date: 2014-05-20
- Inventor: Jun-Rong Chen , Jhao-Cheng Ye
- Applicant: Lextar Electronics Corporation
- Applicant Address: TW Hsinchu
- Assignee: Lextar Electronics Corporation
- Current Assignee: Lextar Electronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., Ltd.
- Priority: TW101116041A 20120504
- Main IPC: H01L33/58
- IPC: H01L33/58

Abstract:
The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.
Public/Granted literature
- US20130292722A1 LIGHT EMITTING DIODE ELEMENT Public/Granted day:2013-11-07
Information query
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