发明授权
- 专利标题: Light-emitting diode, method for manufacturing the same, and light-emitting diode lamp
- 专利标题(中): 发光二极管及其制造方法以及发光二极管灯
-
申请号: US13577817申请日: 2011-02-02
-
公开(公告)号: US08729598B2公开(公告)日: 2014-05-20
- 发明人: Wataru Nabekura , Ryouichi Takeuchi
- 申请人: Wataru Nabekura , Ryouichi Takeuchi
- 申请人地址: JP Tokyo
- 专利权人: Showa Denko K.K.
- 当前专利权人: Showa Denko K.K.
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2010-025352 20100208
- 国际申请: PCT/JP2011/052172 WO 20110202
- 国际公布: WO2011/096445 WO 20110811
- 主分类号: H01L33/00
- IPC分类号: H01L33/00
摘要:
The present invention provides a light-emitting diode that includes two electrodes provided on a light-emitting surface, and exhibits high light extraction efficiency and high-brightness. The present invention relates to a light-emitting diode (1) including: a compound semiconductor layer (2) including a light-emitting portion (7) containing a light-emitting layer (10); and a transparent substrate (3), wherein the compound semiconductor layer (2) and the transparent substrate (3) are bonded, and a first electrode (4) and a second electrode (5) are provided on the side of a main light-emitting surface (2a) of the compound semiconductor layer (2), wherein the transparent substrate (3) includes: an upper surface (3A) bonding to the compound semiconductor layer (2); a bottom surface (3B) having smaller dimensions than dimensions of the upper surface (3A); and a side surface including at least inclined surface (3b) inclined from the side of the upper surface toward the side of the bottom surface, wherein the first and second electrodes (4) and (5) are disposed within a region in which the bottom surface (3B) is projected when viewed from the top of the light-emitting diode.
公开/授权文献
信息查询
IPC分类: