Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13649580Application Date: 2012-10-11
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Publication No.: US08729613B2Publication Date: 2014-05-20
- Inventor: Tatsuya Honda , Masashi Tsubuku , Yusuke Nonaka , Takashi Shimazu , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2011-227022 20111014
- Main IPC: H01L31/062
- IPC: H01L31/062

Abstract:
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.
Public/Granted literature
- US20130092945A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-04-18
Information query
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