发明授权
- 专利标题: Multiple edge enabled patterning
- 专利标题(中): 多边缘启用图案化
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申请号: US12892403申请日: 2010-09-28
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公开(公告)号: US08730473B2公开(公告)日: 2014-05-20
- 发明人: Ming-Feng Shieh , Ya Hui Chang , Ru-Gun Liu , Tsong-Hua Ou , Ken-Hsien Hsieh , Burn Jeng Lin
- 申请人: Ming-Feng Shieh , Ya Hui Chang , Ru-Gun Liu , Tsong-Hua Ou , Ken-Hsien Hsieh , Burn Jeng Lin
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Haynes and Boone, LLP
- 主分类号: G01B11/00
- IPC分类号: G01B11/00 ; H01L21/76 ; H01L23/58
摘要:
Provided is an alignment mark having a plurality of sub-resolution elements. The sub-resolution elements each have a dimension that is less than a minimum resolution that can be detected by an alignment signal used in an alignment process. Also provided is a semiconductor wafer having first, second, and third patterns formed thereon. The first and second patterns extend in a first direction, and the third pattern extend in a second direction perpendicular to the first direction. The second pattern is separated from the first pattern by a first distance measured in the second direction. The third pattern is separated from the first pattern by a second distance measured in the first direction. The third pattern is separated from the second pattern by a third distance measured in the first direction. The first distance is approximately equal to the third distance. The second distance is less than twice the first distance.
公开/授权文献
- US20120074400A1 MULTIPLE EDGE ENABLED PATTERNING 公开/授权日:2012-03-29
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