Invention Grant
- Patent Title: Method of programming a semiconductor memory device
- Patent Title (中): 半导体存储器件编程方法
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Application No.: US12960996Application Date: 2010-12-06
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Publication No.: US08730735B2Publication Date: 2014-05-20
- Inventor: Seong Je Park
- Applicant: Seong Je Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2010-0033719 20100413
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method of programming a semiconductor memory device by applying a program voltage to a selected word line in an incremental step pulse program mode includes raising a voltage of precharging a bit line for program inhibition according to an increase in the program voltage applied to the selected word line.
Public/Granted literature
- US20110249505A1 METHOD OF PROGRAMMING A SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2011-10-13
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