发明授权
- 专利标题： Ohmic electrode for use in a semiconductor diamond device
- 专利标题（中）： 用于半导体金刚石器件的欧姆电极
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申请号： US13386067申请日： 2010-07-21
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公开(公告)号： US08735907B2公开(公告)日： 2014-05-27
- 发明人: Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
- 申请人： Takatoshi Yamada , Somu Kumaragurubaran , Shinichi Shikata
- 申请人地址： JP Tokyo
- 专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人： National Institute of Advanced Industrial Science and Technology
- 当前专利权人地址： JP Tokyo
- 代理机构： Flynn, Thiel, Boutell & Tanis, P.C.
- 优先权： JP2009-170667 20090722
- 国际申请： PCT/JP2010/062219 WO 20100721
- 国际公布： WO2011/010654 WO 20110127
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L23/48 ; H01L21/00 ; H01L21/44
摘要：
In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.