发明授权
- 专利标题： Semiconductor light emitting device and manufacturing method thereof
- 专利标题（中）： 半导体发光器件及其制造方法
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申请号： US13251897申请日： 2011-10-03
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公开(公告)号： US08735923B2公开(公告)日： 2014-05-27
- 发明人: Tae Sung Jang , Seok Min Hwang , Su Yeol Lee , Jong Gun Woo
- 申请人： Tae Sung Jang , Seok Min Hwang , Su Yeol Lee , Jong Gun Woo
- 申请人地址： KR Seoul
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Seoul
- 代理机构： McDermott Will & Emery LLP
- 优先权： KR10-2010-0096293 20101004
- 主分类号： H01L29/18
- IPC分类号： H01L29/18 ; H01L29/30 ; H01L33/00 ; H01L21/00
摘要：
There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.