发明授权
- 专利标题： Semiconductor devices having reduced gate-drain capacitance
- 专利标题（中）： 具有降低的栅 - 漏电容的半导体器件
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申请号： US13034084申请日： 2011-02-24
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公开(公告)号： US08735978B2公开(公告)日： 2014-05-27
- 发明人: Ljubo Radic , Edouard D. de Frésart
- 申请人： Ljubo Radic , Edouard D. de Frésart
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Sherry W. Schumm
- 主分类号： H01L29/72
- IPC分类号： H01L29/72
摘要：
Embodiments of a semiconductor device include a semiconductor substrate having a first surface and a second surface opposed to the first surface, a trench formed in the semiconductor substrate and extending from the first surface partially through the semiconductor substrate, a gate electrode material deposited in the trench, and a void cavity in the semiconductor substrate between the gate electrode material and the second surface. A portion of the semiconductor substrate is located between the void cavity and the second surface.
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