发明授权
- 专利标题： Semiconductor apparatus
- 专利标题（中）： 半导体装置
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申请号： US13552230申请日： 2012-07-18
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公开(公告)号： US08736029B2公开(公告)日： 2014-05-27
- 发明人: Keigo Sato
- 申请人： Keigo Sato
- 申请人地址： JP Toyota-Shi
- 专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人： Toyota Jidosha Kabushiki Kaisha
- 当前专利权人地址： JP Toyota-Shi
- 代理机构： Kenyon & Kenyon LLP
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A semiconductor apparatus includes a semiconductor substrate. The semiconductor substrate includes an active region in which a semiconductor device is formed, and a peripheral region which is located between the active region and an edge surface of the semiconductor substrate. A first insulating layer including conductive particles is formed above at least a part of the peripheral region. By constructing the semiconductor apparatus in this manner, generation of a high electric field in the peripheral region can be suppressed. Therefore, voltage endurance characteristics of the semiconductor apparatus can be improved.
公开/授权文献
- US20130105933A1 SEMICONDUCTOR APPARATUS 公开/授权日：2013-05-02
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