Invention Grant
- Patent Title: Stacked structures and methods of forming stacked structures
- Patent Title (中): 堆叠结构和形成堆叠结构的方法
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Application No.: US11539481Application Date: 2006-10-06
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Publication No.: US08736039B2Publication Date: 2014-05-27
- Inventor: Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
- Applicant: Weng-Jin Wu , Wen-Chih Chiou , Chen-Hua Yu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/22
- IPC: H01L23/22

Abstract:
A stacked structure includes a first die bonded over a second die. The first die has a first die area defined over a first surface. At least one first protective structure is formed over the first surface, around the first die area. At least one side of the first protective structure has at least one first extrusion part extending across a first scribe line around the protective structure. The second die has a second die area defined over a second surface. At least one second protective structure is formed over the second surface, around the second die area. At least one side of the second protective structure has at least one second extrusion part extending across a second scribe line around the protective structure, wherein the first extrusion part is connected with the second extrusion part.
Public/Granted literature
- US20080083959A1 STACKED STRUCTURES AND METHODS OF FORMING STACKED STRUCTURES Public/Granted day:2008-04-10
Information query
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