Invention Grant
- Patent Title: Multi chip semiconductor device
- Patent Title (中): 多芯片半导体器件
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Application No.: US12624490Application Date: 2009-11-24
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Publication No.: US08736074B2Publication Date: 2014-05-27
- Inventor: Daisuke Iguchi , Kanji Otsuka , Yutaka Akiyama
- Applicant: Daisuke Iguchi , Kanji Otsuka , Yutaka Akiyama
- Applicant Address: JP Tokyo
- Assignee: Fuji Xerox Co., Ltd.
- Current Assignee: Fuji Xerox Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2009-115691 20090512
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
According to an aspect of the invention, a semiconductor device includes a substrate having an opening area, a first semiconductor chip, and a second semiconductor chip. The first semiconductor chip has a first electrode for high-speed communication and that is disposed around the opening area on the substrate. The second semiconductor chip has a second electrode and third electrode for power and low-speed communication and that is disposed on the first semiconductor chip so that the first electrode is coupled with the second electrode by electrostatic coupling and dielectric coupling, the third electrode facing the opening area.
Public/Granted literature
- US20100289156A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-11-18
Information query
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