Invention Grant
- Patent Title: Internal voltage generation circuit
- Patent Title (中): 内部电压产生电路
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Application No.: US13485318Application Date: 2012-05-31
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Publication No.: US08736352B2Publication Date: 2014-05-27
- Inventor: Jae Hoon Kim
- Applicant: Jae Hoon Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0145224 20111228
- Main IPC: G05F1/46
- IPC: G05F1/46

Abstract:
An internal voltage generation circuit includes a pumping voltage generation unit configured to generate a pumping voltage when a first internal voltage has a lower level than a first reference voltage or a second internal voltage has a lower level than a second reference voltage, and a select transmission unit configured to selectively transmit the pumping voltage as the first internal voltage or the second internal voltage.
Public/Granted literature
- US20130169353A1 INTERNAL VOLTAGE GENERATION CIRCUIT Public/Granted day:2013-07-04
Information query
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