Invention Grant
US08737112B2 Resistive memory devices, initialization methods, and electronic devices incorporating same
有权
电阻式存储器件，初始化方法和结合其的电子器件
- Patent Title: Resistive memory devices, initialization methods, and electronic devices incorporating same
- Patent Title (中): 电阻式存储器件，初始化方法和结合其的电子器件
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Application No.: US13238669Application Date: 2011-09-21
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Publication No.: US08737112B2Publication Date: 2014-05-27
- Inventor: Chul Woo Park , In Gyu Baek , Dong Hyun Sohn , Hong Sun Hwang
- Applicant: Chul Woo Park , In Gyu Baek , Dong Hyun Sohn , Hong Sun Hwang
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2010-0104553 20101026
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A resistive memory device and method of initialization are provided. The resistive memory device includes a first group of resistive memory cells connected between bit lines and a first plate and a second group connected between bit lines and a second plate. First and second initialization voltages are respectively applied to the first and second plates outside a normal path associated with a normal operation of the resistive memory cells.
Public/Granted literature
- US20120099364A1 RESISTIVE MEMORY DEVICES, INITIALIZATION METHODS, AND ELECTRONIC DEVICES INCORPORATING SAME Public/Granted day:2012-04-26
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