发明授权
- 专利标题: Nonvolatile memory device and read method thereof
- 专利标题(中): 非易失性存储器件及其读取方法
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申请号: US13355834申请日: 2012-01-23
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公开(公告)号: US08737129B2公开(公告)日: 2014-05-27
- 发明人: Changhyun Lee , Jungdal Choi , Byeong-In Choe
- 申请人: Changhyun Lee , Jungdal Choi , Byeong-In Choe
- 申请人地址: KR
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR
- 代理机构: Myers Bigel Sibley & Sajovec, P.A.
- 优先权: KR10-2008-0113531 20081114
- 主分类号: G11C16/10
- IPC分类号: G11C16/10 ; G11C16/26 ; G11C16/34 ; G11C11/56
摘要:
A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
公开/授权文献
- US20120120732A1 NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF 公开/授权日:2012-05-17