Invention Grant
- Patent Title: Plasma etching method
- Patent Title (中): 等离子蚀刻法
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Application No.: US13664940Application Date: 2012-10-31
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Publication No.: US08741166B2Publication Date: 2014-06-03
- Inventor: Tomoyuki Watanabe , Michikazu Morimoto , Mamoru Yakushiji , Tetsuo Ono
- Applicant: Hitachi High-Technologies Corporation
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2011-238166 20111031; JP2012-229411 20121017
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00
Abstract:
A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.
Public/Granted literature
- US20130157470A1 PLASMA ETCHING METHOD Public/Granted day:2013-06-20
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