发明授权
US08741674B2 Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
失效
III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
- 专利标题: Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
- 专利标题(中): III族氮化物半导体激光器件以及III族氮化物半导体激光器件的制造方法
-
申请号: US13335560申请日: 2011-12-22
-
公开(公告)号: US08741674B2公开(公告)日: 2014-06-03
- 发明人: Yusuke Yoshizumi , Shimpei Takagi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
- 申请人: Yusuke Yoshizumi , Shimpei Takagi , Yohei Enya , Takashi Kyono , Masahiro Adachi , Masaki Ueno , Takamichi Sumitomo , Shinji Tokuyama , Koji Katayama , Takao Nakamura , Takatoshi Ikegami
- 申请人地址: JP Osaka-shi
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JP Osaka-shi
- 代理机构: Venable LLP
- 代理商 Michael A. Sartori; Tamatane J. Aga
- 优先权: JP2009-144442 20090617; JP2010-008181 20100118
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L21/8252
摘要:
Provided is a group-III nitride semiconductor laser device with a laser cavity of high lasing yield, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface. In a laser structure, a first surface is opposite to a second surface. The first and second fractured faces extend from an edge of the first surface to an edge of the second surface. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.