发明授权
- 专利标题： Methods of manufacturing three-dimensional semiconductor devices
- 专利标题（中）： 制造三维半导体器件的方法
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申请号： US13165256申请日： 2011-06-21
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公开(公告)号： US08741761B2公开(公告)日： 2014-06-03
- 发明人: Jaegoo Lee , Byungkwan You , Youngwoo Park , Kwang Soo Seol
- 申请人： Jaegoo Lee , Byungkwan You , Youngwoo Park , Kwang Soo Seol
- 申请人地址： KR Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0059150 20100622
- 主分类号： H01L23/3205
- IPC分类号： H01L23/3205 ; H01L21/31
摘要：
Methods of manufacturing three-dimensional semiconductor devices that may include forming a first spacer on a sidewall inside a first opening formed in a first stack structure, forming a sacrificial filling pattern on the spacer to fill the first opening, forming a second stack structure including a second opening exposing the sacrificial filling pattern on the first stack structure, forming a second spacer on a sidewall inside the second opening, removing the sacrificial filling pattern and removing the first spacer and the second spacer.