发明授权
- 专利标题: Charging-free electron beam cure of dielectric material
- 专利标题(中): 无电荷电子束固化电介质材料
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申请号: US13561240申请日: 2012-07-30
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公开(公告)号: US08741782B2公开(公告)日: 2014-06-03
- 发明人: Christos D. Dimitrakopoulos , Kam L. Lee , Robert L. Wisnieff
- 申请人: Christos D. Dimitrakopoulos , Kam L. Lee , Robert L. Wisnieff
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Daniel P. Morris, Esq.
- 主分类号: H01J37/304
- IPC分类号: H01J37/304
摘要:
An ultra low-k dielectric material layer is formed on a semiconductor substrate. In one embodiment, a grid of wires is placed at a distance above a top surface of the ultra low-k dielectric material layer and is electrically biased such that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. In another embodiment, a polymeric conductive layer is formed directly on the ultra low-k dielectric material layer and is electrically biased so that the total electron emission coefficient becomes 1.0 at the energy of electrons employed in electron beam curing of the ultra low-k dielectric material layer. By maintaining the total electron emission coefficient at 1.0, charging of the substrate is avoided, thus protecting any device on the substrate from any adverse changes in electrical characteristics.
公开/授权文献
- US20120302011A1 CHARGING-FREE ELECTRON BEAM CURE OF DIELECTRIC MATERIAL 公开/授权日:2012-11-29