Invention Grant
- Patent Title: Photosensor and method of manufacturing the same
- Patent Title (中): 光电传感器及其制造方法
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Application No.: US13239627Application Date: 2011-09-22
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Publication No.: US08742413B2Publication Date: 2014-06-03
- Inventor: Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
- Applicant: Jae-Hwan Oh , Won-Kyu Lee , Seong-Hyun Jin , Young-Jin Chang , Jae-Beom Choi
- Applicant Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Giheung-Gu, Yongin, Gyeonggi-Do
- Agent Robert E. Bushnell, Esq.
- Priority: KR10-2011-0001074 20110105
- Main IPC: H01L31/0264
- IPC: H01L31/0264 ; H01L31/20
Abstract:
In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer.
Public/Granted literature
- US20120168745A1 Photosensor and Method of Manufacturing the Same Public/Granted day:2012-07-05
Information query
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